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| Power Transistors 2SD2273 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1500 3.30.2 5.00.3 3.0 Unit: mm 20.00.5 s Features q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.00.5 2.5 2.00.3 3.00.3 1.00.2 (TC=25C) Ratings 100 80 5 6 3 45 3.5 150 -55 to +150 Unit V V V A 2.70.3 0.60.2 5.450.3 10.90.5 1 2 3 A W C C 1:Base 2:Collector 3:Emitter TOP-3L Package Internal Connection C B E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VCE = 80V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 2A, IB = 2mA IC = 2A, IB = 2mA VCE = 10V, IC = 0.5A, f = 1MHz IC = 2A, IB1 = 2mA, IB2 = -2mA, VCC = 50V 20 3.5 2.5 0.6 80 2000 5000 30000 2.5 3.0 V V MHz s s s min typ max 100 100 100 Unit A A A V FE2 Rank classification Q P Rank hFE2 5000 to 15000 8000 to 30000 2.0 1.5 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 26.00.5 10.0 2.0 4.0 3.0 1 Power Transistors PC -- Ta 80 6 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.5W) (1) 2SD2273 IC -- VCE 100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Collector power dissipation PC (W) 70 60 50 40 30 20 10 0 0 20 40 (2) (3) 5 30 Collector current IC (A) 4 IB=3mA 0.5mA 0.4mA 0.3mA 10 3 3 TC=-25C 1 25C 0.3 100C 2 0.2mA 1 0.1mA 0 60 80 100 120 140 160 0 2 4 6 8 10 12 0.1 0.1 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=1000 100000 hFE -- IC 1000 Cob -- VCB Collector output capacitance Cob (pF) VCE=5V IE=0 f=1MHz TC=25C 30 Forward current transfer ratio hFE 300 10000 10 TC=100C 25C 100 TC=100C 3 -25C 1000 30 1 25C 100 -25C 10 0.3 3 0.1 0.1 0.3 1 3 10 30 100 10 0.01 1 0.1 1 10 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=-IB2) VCC=50V TC=25C ton tstg 1 tf 0.3 0.1 0.03 0.01 0 2 4 6 8 Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 10 I CP 3 1 0.3 0.1 0.03 0.01 1 3 10 30 IC 10ms DC t=1ms 100 300 1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 1000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 100 (1) 2SD2273 Thermal resistance Rth(t) (C/W) 10 (2) 1 0.1 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 This datasheet has been download from: www..com Datasheets for electronics components. |
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